High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide

By D. Feng, S. Liao, Po Dong, N. Feng, Hong Liang, D. Zheng, C. Kung, J. Fong, R. Shafiiha, John E. Cunningham and 2 more. 2009

202 citations recorded by the source corpus.

We demonstrate a compact, high speed Ge photodetector efficiently butt-coupled with a large cross-section silicon-on-insulate (SOI) waveguide in which the Ge p-i-n junction is placed in the horizontal direction to enable very high speed operation. The demonstrated photodetector has an active area of only 0.8×10 μm2, greater than 32 GHz optical bandwidth, and a responsivity of 1.1 A/W at a wavelength of 1550 nm. Very importantly the device can readily be integrated with high performance wavelength-division-multiplexing filters based on large cross-section SOI waveguide to form monolithic integrated silicon photonics receivers for multichannel terabit data transmission applications.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b62588b7ac74a2c965852feb5e79bd1b871c9df3

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In Atomic and Molecular Physics, and Optics

1. Jürgen Michel
2. Lionel C. Kimerling
3. Jifeng Liu

In Electrical and Electronic Engineering

1. Jürgen Michel
2. Lionel C. Kimerling
3. Jifeng Liu

Citations in the corpus

• High-performance Ge-on-Si photodetectors (2010, background): “The highest reported efficiency–bandwidth product for a waveguide-coupled Ge detector is 30 GHz at a bias of 1 V (ref”