Design of a Highly Efficient 2–4-GHz Octave Bandwidth GaN-HEMT Power Amplifier

By Paul Saad, Christian Fager, H. Cao, Herbert Zirath, Kristoffer Andersson. IEEE transactions on microwave theory and techniques, 2010

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Pseudo-Doherty Load-Modulated Balanced Amplifier With Wide Bandwidth and Extended Power Back-Off Range (2020, background): “Such a frequency response of the optimal loadline is mainly due to the parastics of the packaged GaN transistor, which has been observed in many wideband GaN PA designs [46]–[48].”
A Post-Matching Doherty Power Amplifier Employing Low-Order Impedance Inverters for Broadband Applications (2015, methodology): “In this modified configuration, all of the high-order matching topologies mentioned above can be employed as the post matching networks, providing an appropriate impedance ratio in a broadband design.”
Highly Efficient Broadband Continuous Inverse Class-F Power Amplifier Design Using Modified Elliptic Low-Pass Filtering Matching Network (2016, background): “The nonlinear order and memory depth were set as [7] and [5], respectively.”
Design of Highly Efficient Broadband Class-E Power Amplifier Using Synthesized Low-Pass Matching Networks (2011, methodology): “To date, GaN HEMTs have been applied in numerous high-efficiency broadband PA designs [8]–[12].”