Ultra-thin DVS-BCB adhesive bonding of III-V wafers, dies and multiple dies to a patterned silicon-on-insulator substrate

By S. Keyvaninia, Muhammad Muneeb, S. Stankovic, van Pj René Veldhoven, Van D Thourhout, Gunther Roelkens. 2013

192 citations recorded by the source corpus.

Heterogeneous integration of III-V semiconductor materials on a silicon-on-insulator (SOI) platform has recently emerged as one of the most promising methods for the fabrication of active photonic devices in silicon photonics. For this integration, it is essential to have a reliable and robust bonding procedure, which also provides a uniform and ultra-thin bonding layer for an effective optical coupling between III-V active layers and SOI waveguides. A new process for bonding of III-V dies to processed silicon-on-insulator waveguide circuits using divinylsiloxane-bis-benzocyclobutene (DVS-BCB) was developed using a commercial wafer bonder. This “cold bonding” method significantly simplifies the bonding preparation for machine-based bonding both for die and wafer-scale bonding. High-quality bonding, with ultra-thin bonding layers (<50 nm) is demonstrated, which is suitable for the fabrication of heterogeneously integrated photonic devices, specifically hybrid III-V/Si lasers.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b43a7495de1cc9871e46a3089eed6db331a1a1e7

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In Electrical and Electronic Engineering

  1. D. van Thourhout
  2. R. Baets
  3. Lukas Chrostowski
  4. Gunther Roelkens
  5. Karen C. Cheung
  6. Bart Kuyken
  7. J. Van Campenhout
  8. Hossam Shoman

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