Convergence of electronic bands for high performance bulk thermoelectrics
By Y. Pei, Xiaoya Shi, A. Lalonde, Heng Wang, Lidong Chen, G. J. Snyder. Nature, 2011
3,730 citations recorded by the source corpus.
Subfields: Civil and Structural Engineering, Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/b1ac1f50f055c5b08bdd8cab74a7112f12290f29
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Citations in the corpus
- Low-Symmetry Rhombohedral GeTe Thermoelectrics (2018, methodology): “4 at 600 K (Figure 1B), which is much higher than that of any of its cubic analogs.(2,6,31,32,36) Such a record zT stems from a slight symmetry reduction from a cubic structure, which simultaneously enables the rearrangement of split valence bands and the reduction in kL.”
- High thermoelectric performance by resonant dopant indium in nanostructured SnTe (2013, background): “The light-hole–heavy-hole band edge energy difference is 0.12 eV for PbTe, 0.26 eV for PbSe, and 0.35 eV for SnTe (9, 29, 36); thus, the heavy-hole contribution is relatively weaker for SnTe.”