High thermoelectric performance by resonant dopant indium in nanostructured SnTe

By Qian Zhang, B. Liao, Yucheng Lan, K. Lukas, Weishu Liu, Keivan Esfarjani, C. Opeil, D. Broido, Gang Chen, Zhifeng Ren. Proceedings of the National Academy of Sciences of the United States of America, 2013

679 citations recorded by the source corpus.

Subfields: Civil and Structural Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/05f7c676f78b9e50f96dc19aff9f03e2ac4793f4

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Civil and Structural Engineering

1. Li-dong Zhao
2. Y. Pei
3. Xiao Zhang
4. Lidong Chen
5. Xun Shi
6. Zhiwei Chen
7. Siqi Lin
8. Wen Li

In Electrical and Electronic Engineering

1. Li-dong Zhao
2. Xun Shi
3. Lidong Chen
4. Xiao Zhang
5. C. Uher
6. Y. Pei
7. Zhiwei Chen
8. Siqi Lin

In Materials Chemistry

1. Li-dong Zhao
2. Lidong Chen
3. Xun Shi
4. C. Uher
5. Xiao Zhang
6. Y. Pei
7. Zhiwei Chen
8. Siqi Lin

Citations in the corpus

• Recent advances in high-performance bulk thermoelectric materials (2016, background): “A notable enhancement in the Seebeck coefficient due to the presence of electron resonance states has also been reported in Al-doped PbSe79 and In-doped SnTe.80 Unlike the band convergence, the electron resonant state strongly scatters carriers and thus can have a deleterious effect on the PF by deg”
• Thermoelectric materials: Energy conversion between heat and electricity (2015, methodology): “The intra matrix band engineering described above has also been successfully applied to other systems such as the PbSeeSrSe [52], Mg2SieMg2Sn [53] and the SnTe systems [47,54].”