Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals

By N. Butch, K. Kirshenbaum, P. Syers, A. Sushkov, G. Jenkins, H. Drew, J. Paglione. 2010

309 citations recorded by the source corpus.

havebeen studied. A comprehensive analysis of Shubnikov de Haas oscillations, Hall effect, and opticalreflectivity indicates that the measured electrical transport can be attributed solely to bulk states,even at 50 mK at low Landau level filling factor, and in the quantum limit. The absence of asignificant surface contribution to bulk conduction demonstrates that even in very clean samples,the surface mobility is lower than that of the bulk, despite its topological protection.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b158aef43cd92861cf0876b6c0e0084a28202f5b

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In Atomic and Molecular Physics, and Optics

1. S. Adam
2. M. Fuhrer
3. E. Hwang
4. E. Rossi
5. N. M. R. Peres
6. Y. Ando

In Condensed Matter Physics

1. J. Paglione

In Materials Chemistry

1. S. Adam
2. M. Fuhrer
3. E. Hwang
4. E. Rossi
5. N. M. R. Peres
6. A. Di Bartolomeo
7. Y. Ando

Citations in the corpus

• Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3 (2011, methodology): “The rs range corresponds to the existing estimates in the literature of 3 < vf < 7 x 10(5) m/s [3,4], and 30 < κeff < 60 [1,10].”