Temperature-dependent transport in suspended graphene.

By K. Bolotin, K. Sikes, James C. Hone, H. Stormer, Philip Kim. Physical Review Letters, 2008

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The resistivity of ultraclean suspended graphene is strongly temperature (T) dependent for 5<T<240 K. At T-5 K transport is near-ballistic in a device of approximately 2 microm dimension and a mobility approximately 170,000 cm2/V s. At large carrier density, n>0.5 x 10(11) cm(-2), the resistivity increases with increasing T and is linear above 50 K, suggesting carrier scattering from acoustic phonons. At T=240 K the mobility is approximately 120,000 cm2/V s, higher than in any known semiconductor. At the charge neutral point we observe a nonuniversal conductivity that decreases with decreasing T, consistent with a density inhomogeneity <10(8) cm(-2).

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/aeac4f9415ac23cd2d9ea3b5128dd08c13198289

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Citations in the corpus

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Raman spectroscopy and imaging of graphene (2008, background): “The mobility of graphene at room temperature is ~120 000 cm(2)/(V·s), higher than any known semiconductor [9, 10].”