Metal-insulator transition of VO2 thin films grown on TiO2 (001) and (110) substrates

By Y. Muraoka, Z. Hiroi. 2002

504 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/adc3a2699a992825d97abff211eccc1eb8d7892f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. J. Nag
2. Richard F. Haglund Jr.
3. C. Ko
4. I. Parkin
5. Zheng Yang
6. Shriram Ramanathan

In Electronic, Optical and Magnetic Materials

1. Richard F. Haglund Jr.
2. C. Ko
3. I. Parkin
4. Zheng Yang
5. Shriram Ramanathan
6. J. Nag

In Polymers and Plastics

1. J. Nag
2. Richard F. Haglund Jr.
3. C. Ko
4. Zheng Yang
5. Shriram Ramanathan

Citations in the corpus

• Synthesis of vanadium dioxide thin films and nanoparticles (2008, background): “Notably, in 2001, Muraoka (Muraoka and Hiroi 2002) reported epitaxial growth of VO2 on TiO2 (001 and 110 planes) where the lattice mismatch is ∼0.85%, and showed that the transition temperature of the deposited epitaxial VO2 films had a strong dependence on the substrate’s plane of…”
• Intelligent Multifunctional VO2/SiO2/TiO2 Coatings for Self-Cleaning, Energy-Saving Window Panels (2016, background): “peaks in the XRD data, which indicates the presence of lattice strain caused by the underlying VO2 phase and the lattice mismatch between the monoclinic VO2 and rutile (tetragonal) TiO2 phases.(38) This strain effect is still evident in the thicker SiO2 deposition (sample VST–3) (Figure 1(b)).”
• Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions (2011, methodology): “For example, a recent theoretical study predicts semi–Dirac point behavior at VO2-TiO2 interfaces (148, 149), which could be very interesting to experimentally investigate.”