Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)

By Ratan K Debnath, R. Meijers, T. Richter, T. Stoica, R. Calarco, H. Lüth. 2007

222 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/acc57cafdd25902e9e73174f453ad862986220ba

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In Materials Chemistry

1. Stephan Reitzenstein

Citations in the corpus

• Direct comparison of catalyst-free and catalyst-induced GaN nanowires (2010, background): “Such large dispersions in diameter and length have been attributed to the coalescence of short columns and enhanced growth of thinner ones through a diffusion-induced growth mechanism [18].”