Direct comparison of catalyst-free and catalyst-induced GaN nanowires

By C. Chèze, L. Geelhaar, O. Brandt, W. Weber, H. Riechert, S. Münch, R. Rothemund, Stephan Reitzenstein, A. Forchel, T. Kehagias and 3 more. 2010

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GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-induced by means of Ni seeds. Under identical growth conditions of temperature and V/III ratio, both types of GaN nanowires are of wurtzite structure elongated in the Ga-polar direction and are constricted by M-plane facets. However, the catalyst-induced nanowires contain many more basal-plane stacking faults and their photoluminescence is weaker. These differences can be explained as effects of the catalyst Ni seeds.

Subfields: Biomedical Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/73b6ed253008615b555c84e7a81235ae104c70d9