Effects of a‐Si:H layer thicknesses on the performance of a‐Si:H∕c‐Si heterojunction solar cells

By H. Fujiwara, M. Kondo. 2007

227 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ac39685bb658acdd62d55af7745be33bdbb0e686

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. S. De Wolf
2. Christophe Ballif
3. Z. Holman
4. A. Descoeudres
5. L. Barraud

In Materials Chemistry

1. S. De Wolf
2. Christophe Ballif
3. Z. Holman
4. A. Descoeudres
5. L. Barraud

Citations in the corpus

• Current Losses at the Front of Silicon Heterojunction Solar Cells (2012, background): “Others have demonstrated that absorption in the heavily doped a-Si:H p-layer is parasitic due to its high defect density, and that Jsc also decreases with i-layer thickness [3], [10]–[13].”
• 24.7% Record Efficiency HIT Solar Cell on Thin Silicon Wafer (2013, background): “It was reported that a certain thickness of i-layer would be necessary to complete the well-passivated surface for a specified Voc [9], [10], but we found there is still a way to overcome the tradeoff between Jsc and Voc .”
• Achievement of More Than 25% Conversion Efficiency With Crystalline Silicon Heterojunction Solar Cell (2014, background): “a-Si layers for crystalline silicon heterojunction solar cells [17].”