A Review of Dry Etching of GaN and Related Materials

By S. Pearton, R. Shul, Fan Ren. 2000

185 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/abebc197b6237053d1b0ab31c45e310703dbcb06

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

1. Guangnan Zhou
2. Hongyu Yu
3. Fanming Zeng
4. Wenmao Li
5. Hui Wang
6. T. Duan
7. J. An
8. Lingli Jiang

Citations in the corpus

• A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability (2018, background): “The dry etching rate can reach to the level of micron per minute handily [55,56].”