Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy
By J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, J. Schulze. 2011
172 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/abcf7f4fc75a9fdff25ea61399ecd7a4b21172fa
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications (2019, background): “3 development is shown in Table I.(13-40) To fully understand the potential of GeSn detectors, a comprehensive study regarding Sn-compositional device performance, particular with higher Sn composition (higher than 10%), is highly desirable.”