Quantum Transport in Semiconductor Nanostructures

By C. Beenakker, H. Houten. 2004

1,016 citations recorded by the source corpus.

Publisher Summary Quantum transport is conveniently studied in a two-dimensional electron gas (2DEG) because of the combination of a large Fermi wavelength and large mean free path. Semiconductor nanostructures are unique in offering the possibility of studying quantum transport in an artificial potential landscape. This is the regime of ballistic transport in which scattering with impurities are neglected. The chapter presents a self-contained account of these three novel transport regimes in semiconductor nanostructures. The study of quantum transport in semiconductor nanostructures is motivated by more than scientific interest. The fabrication of nanostructures relies on sophisticated crystal growth and lithographic techniques that exist because of the industrial effort toward the miniaturization of transistors. Conventional transistors operate in the regime of classical diffusive transport, which breaks down on short length scales. The discovery of novel transport regimes in semiconductor nanostructures provides options for the development of innovative future devices.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/abcabae0fc15c672df18b4ce922c7cf5d96f6b71

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

Citations in the corpus

High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator. (2014, background): “t the same concentration x, the T C for V doping is twice the value found for Cr doping. Having a higher T C with low x is in the right direction for reaching the QAH state at a higher temperature.23 (2) The Hall traces for the x=0.13 films are shown in Fig. 3b. In both cases, the square-shaped loop”
The quantum Hall effect as an electrical resistance standard (2001, background): “For additional information, excellent review papers have been published on the subject [31, 47].”
Mesoscopic Physics of Electrons and Photons (2007, background): “In semiconductors, the majority of experiments are performed in a two-dimensional electron gas realized in an inversion layer at the interface between two semiconductors (GaAs/AlxGa1−xAs) or between a semiconductor and an insulator (Si–SiO2 in structures called Si–MOSFET) [32].”
Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films (2011, background): “They are sensitive to the competition between the phase coherence time τφ and other time-scales, and have been extensively employed as a probe for coherent dynamics in solid state systems [19].”
Origin and magnitude of 'designer' spin-orbit interaction in graphene on semiconducting transition metal dichalcogenides (2016, background): “The magnitude of the negative magnetoconductivity decreases uponwarming up the devices, and the effect disappears entirely at T ≃ 20–30 K, as expected for quantum interference effects [43].”