Resistive switching memory effect of ZrO2 films with Zr+ implanted

By Qi Liu, W. Guan, Shibing Long, R. Jia, Ming Liu, Jun-ning Chen. 2008

269 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/a8dc2b16a5f3db73a7cd16789948b33eb3f2b775

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Haibo Zeng
2. Xiaoming Li
3. Zhaoping Liu
4. Xufeng Zhou

Citations in the corpus

• Mechanism of nonvolatile resistive switching in graphene oxide thin films (2011, background): “Fitting results for the HRS suggest that the charge transport behavior is in good agreement with a trap-controlled space charge limited conduction (SCLC), which mainly consists of two portions: the Ohmic region (I / V) and the Child’s law region (I / V) [31,32].”
• Capping CsPbBr3 with ZnO to improve performance and stability of perovskite memristors (2017, background): “In contrast, in the higher-voltage region, the current of the HRS increased very quickly, corresponding to the steep increase [43].”