Influence of phonon, geometry, impurity, and grain size on Copper line resistivity
By J. Plombon, E. Andideh, V. Dubin, J. Maiz. 2006
137 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/a88a638b3f37bbf292cd00f3dcab38306b19b167
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
In Electronic, Optical and Magnetic Materials
Citations in the corpus
- Energy dissipation and transport in nanoscale devices (2010, background): “For instance, the electrical resistivity of Cu interconnects with line widths below 100 nm increases by more than a factor of two from the bulk Cu resistivity [124], and the resistivity for line widths near 40 nm was shown to increase by at least a factor of four [125, 126] at room temperature.”