Device implications of spin-transfer torques

By Jordan A. Katine, E. Fullerton. 2008

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Advances and Future Prospects of Spin-Transfer Torque Random Access Memory (2010, methodology): “The MTJ writing current [7], [17] is described by the following equation”
Electric-Field-Controlled Magnetoelectric RAM: Progress, Challenges, and Scaling (2015, positive): “A key advantage of a magnetoelectric device, compared with those of existing current-controlled devices utilizing spin-transfer torque (STT) [6]–[11], Oersted fields [12], [13], or even spin-orbit torques [14]–[17], is the potential for dramatic reductions in power dissipation.”
Spin-Torque and Spin-Hall Nano-Oscillators (2015, background): “For more in-depth reviews of STT-based MRAM and STNOs, see [25]–[30].”
Magnetization oscillations and waves driven by pure spin currents (2016, background): “Since the first demonstration [1-5] of the possibility to excite magnetization dynamics by spin-polarized electric currents due to the spin transfer torque (STT) effect [6,7], dynamic spin torque phenomena have become the subject of intense research [8-15].”
Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layer. (2010, background): “allow the design of integrated spintronic devices with reduced dimensions and energy consumption compared with conventional magnetic field actuatio”