A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots
By D. M. Zajac, T. Hazard, Xiao Mi, Ke Wang, Jason R. Petta. 2015
150 citations recorded by the source corpus.
We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/a5c44ec1dac28e6606f84e2ef93802a91de35a3d
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
Citations in the corpus
- Scalable gate architecture for a one-dimensional array of semiconductor spin qubits (2016, methodology): “An aluminum screening layer restricts the action of the tuning gates to a onedimensional channel [12].”
- Low-frequency charge noise in Si/SiGe quantum dots (2019, background): “Here, we characterize the low-frequency charge noise in Si/SiGe quantum dots with overlapping gates [19, 20].”
- Materials challenges and opportunities for quantum computing hardware (2021, background): “Overlapping gate stack structures with interface dielectric layers have become widely used in fabricating processors with larger numbers of qubits ( 150 – 154 ).”