Low-frequency charge noise in Si/SiGe quantum dots

By Elliot J. Connors, J. Nelson, Haifeng Qiao, L. Edge, J. Nichol. Physical review B, 2019

137 citations recorded by the source corpus.

Electron spins in silicon have long coherence times and are a promising qubit platform. However, electric field noise in semiconductors poses a challenge for most single- and multi-qubit operations in quantum-dot spin qubits. Here, we investigate the dependence of low-frequency charge noise spectra on temperature and aluminum-oxide gate dielectric thickness in Si/SiGe quantum dots with overlapping gates. We find that charge noise increases with aluminum oxide thickness. We also find strong dot-to-dot variations in the temperature dependence of the noise magnitude and spectrum. These findings suggest that each quantum dot experiences noise caused by a distinct ensemble of two-level systems, each of which has a non-uniform distribution of thermal activation energies. Taken together, our results suggest that charge noise in Si/SiGe quantum dots originates at least in part from a non-uniform distribution of two-level systems near the surface of the semiconductor.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/60a4ed6914a2a6b869f18eb65fb4b2f2087e5ad0

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

  1. Kohei M. Itoh
  2. T. Northup
  3. Nitin Samarth

In Electrical and Electronic Engineering

  1. Kohei M. Itoh

Citations in the corpus