Overview of high voltage sic power semiconductor devices: development and application

By Shiqi Ji, Zheyu Zhang, Fred Wang. 2017

164 citations recorded by the source corpus.

Research on high voltage (HV) silicon carbide (SiC) power semiconductor devices has attracted much attention in recent years. This paper overviews the development and status of HV SiC devices. Meanwhile, benefits of HV SiC devices are presented. The technologies and challenges for HV SiC device application in converter design are discussed. The state-of-the-art applications of HV SiC devices are also reviewed.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/a483b4b466e7257f6a9ab9480f1d47174ddb770c

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Citations in the corpus

• A Review of SiC Power Module Packaging Technologies: Challenges, Advances, and Emerging Issues (2020, background): “of magnitude higher than the dv/dt of Si devices up to 50 kV/μs [18], [27], making the current through the pack-”