Development of a Nanoelectronic 3-D (NEMO 3-D ) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots

By Gerhard Klimeck, F. Oyafuso, Timothy B. Boykin, R. Bowen, Paul von Allmen. 2002

146 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Computational Theory and Mathematics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/a2f5d1eb7c577e0960f8d6665d12490bc8aacc7f

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Gerhard Klimeck
2. Mark S. Lundstrom

In Electrical and Electronic Engineering

1. Timothy B. Boykin
2. Gerhard Klimeck
3. Rajib Rahman

Citations in the corpus

• Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part I: Models and Benchmarks (2007, methodology): “NEMO 3-D [11], [26]–[29] bridges the gap between the large-size classical semiconductor device models and the”
• Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET (2008, methodology): “To calculate the eigenenergies of single gated donors in our FinFETs, we apply an atomistic tight-binding model implemented in NEMO 3D (Nanoelectronic Modeling tool, see refs&nbs”
• Silicon quantum electronics (2012, unknown): “…parameter that is fit to tight-binding results, as the output of a multiscale approach (Chutia et al., 2008; Saraiva et al., 2009), or by explicit atomistic calculation on large scales, as embodied by the NEMO tool suite (Boykin et al., 2004b; Klimeck et al., 2007, 2002; Steiger et al., 2011).”