Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

By G. Lansbergen, Rajib Rahman, C. Wellard, I. Woo, J. Caro, N. Collaert, S. Biesemans, Gerhard Klimeck, L. Hollenberg, S. Rogge. 2008

289 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/4dd66b06783f483891a0bd081231ced246768791

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. A. Morello
2. Gerhard Klimeck
3. Andrew Dzurak
4. Jukka P. Pekola

In Electrical and Electronic Engineering

1. Nan Zhang
2. A. Morello
3. Antti Kemppinen
4. Gerhard Klimeck
5. Andrew Dzurak
6. Mikko Möttönen
7. Dmitri V. Averin
8. Y. Pashkin

Citations in the corpus

• Silicon quantum electronics (2012, methodology): “These calculations provided an excellent description of the low lying donor states observed and determination of the donor species (Lansbergen et al., 2008).”
• Towards atomic and close-to-atomic scale manufacturing (2019, background): “Except for imaging, STEM has also been employed as a tool for manipulation of single atoms.”
• Single-electron current sources: towards a refined definition of ampere (2012, background): “By connecting such natural atoms to electron reservoirs, for example, single-electron transistors (SETs) have been fabricated (Lansbergen et al., 2008; Tan et al., 2010).”