Intrinsic charge transport on the surface of organic semiconductors.
By V. Podzorov, E. Menard, A. Borissov, V. Kiryukhin, John A. Rogers, Michael Gershenson. Physical Review Letters, 2004
993 citations recorded by the source corpus.
The air-gap field-effect technique enabled realization of the intrinsic (not limited by static disorder) polaronic transport on the surface of rubrene (C42H28) crystals over a wide temperature range. The signatures of this intrinsic transport are the anisotropy of the carrier mobility, mu, and the growth of mu with cooling. Anisotropy of mu vanishes in the activation regime at low temperatures, where the transport is dominated by shallow traps. The deep traps, introduced by x-ray radiation, increase the field-effect threshold without affecting mu, an indication that the filled traps do not scatter polarons.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/a23f741509f416758337d4c33e2b11a5822a80ee
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
- Michele Muccini
- C. Daniel Frisbie
- J. Mannhart
- M. Di Ventra
- Maria Antonietta Loi
- Andy Thomas
- Mohammed Affan Zidan
- Khaled Nabil Salama
Citations in the corpus
- Electrostatic modification of novel materials (2006, methodology): “This mechanical flexibility of TMD-based FETs and a remarkably simple fabrication process Podzorov et al., 2004a, 2004b make these devices very attractive for applications in the low-cost flexible electronics.”
- Charge transport in organic semiconductors. (2012, neutral): “[159] measured a value of 30 cm(2)/V (1)s 1 at 200 K.”