Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

By T. Mizuno, Shinichi Takagi, Naoharu Sugiyama, H. Satake, Atsushi Kurobe, A. Toriumi. IEEE Electron Device Letters, 2000

195 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/a12b9cd27a7a7f026f5991afa45e4b4b547289cd

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Citations in the corpus

• Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates (2001, methodology): “Due to Ge segregation at high temperature, the maximum Ge content is limited to a low value [ 2 ]‐[4].”