Balancing the etching and passivation in time-multiplexed deep dry etching of silicon

By M. Blauw, T. Zijlstra, E. V. D. Drift. 2001

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A Review of Micromodels and Their Use in Two‐Phase Flow Studies (2012, background): “…the depth and the width of an etched channel even greater than 20:1. h ere is still a maximum achievable aspect ratio between the depth and the width of the channel, however, that depends on the material, the beam proi le, etc. (Blauw et al., 2001; Yeom et al., 2003; Willingham et al., 2008).”
Fabrication of nanopillars by nanosphere lithography (2006, methodology): “Nanopillars were fabricated with the polystyrene bead coated silicon by applying the “Bosch” time-multiplexed RIE process [15, 16] in a commercial inductive coupled plasma etcher.”
Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment (2009, unknown): “etching high raised structures [230–308] with pulsed-mode”