Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices
By Kunook Chung, Chul‐Ho Lee, G. Yi. Science, 2010
618 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/9fa5dcd59bd313c3dd062f53af87741369e9d6b1
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In Condensed Matter Physics
In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Experimental Review of Graphene (2011, background): “In one design, a GaN thin film is grown on graphene (functioning as the substrate and electrode) with the assistance of ZnO nanowalls to overcome the absence of GaN nucleation on pristine graphene [146].”
- Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes (2011, background): “Accordingly, graphene has been proposed as a novel material for incorporation into devices ranging from Schottky light-emitting diodes [6–8] to field-effect transistors (FETs) [9,10].”