Electron spin coherence exceeding seconds in high-purity silicon.

By A. Tyryshkin, S. Tojo, J. Morton, H. Riemann, N. Abrosimov, P. Becker, H. Pohl, T. Schenkel, M. Thewalt, Kohei M. Itoh and 1 more. Nature Materials, 2011

651 citations recorded by the source corpus.

Silicon is one of the most promising semiconductor materials for spin-based information processing devices. Its advanced fabrication technology facilitates the transition from individual devices to large-scale processors, and the availability of a (28)Si form with no magnetic nuclei overcomes a primary source of spin decoherence in many other materials. Nevertheless, the coherence lifetimes of electron spins in the solid state have typically remained several orders of magnitude lower than that achieved in isolated high-vacuum systems such as trapped ions. Here we examine electron spin coherence of donors in pure (28)Si material (residual (29)Si concentration <50 ppm) with donor densities of 10(14)-10(15) cm(-3). We elucidate three mechanisms for spin decoherence, active at different temperatures, and extract a coherence lifetime T(2) up to 2 s. In this regime, we find the electron spin is sensitive to interactions with other donor electron spins separated by ~200 nm. A magnetic field gradient suppresses such interactions, producing an extrapolated electron spin T(2) of 10 s at 1.8 K. These coherence lifetimes are without peer in the solid state and comparable to high-vacuum qubits, making electron spins of donors in silicon ideal components of quantum computers, or quantum memories for systems such as superconducting qubits.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9eaec6ed3e06f339480a6adfa8466d5e892b5e13

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In Atomic and Molecular Physics, and Optics

1. Franco Nori
2. Sahel Ashhab
3. J. You
4. Z. Xiang
5. Mikhail D. Lukin
6. Kohei M. Itoh
7. Peter Zoller
8. H. Watanabe

In Materials Chemistry

1. R. Walsworth
2. M. Turner
3. C. Hart
4. J. Schloss
5. J. Barry
6. L. Pham
7. E. Bauch
8. Kohei M. Itoh

Citations in the corpus

• Decoherence of ensembles of nitrogen-vacancy centers in diamond (2020, background): “In other dense spin-ensemble systems, spin relaxation has been observed to be dominated by likespin interactions [8, 17, 18].”
• An addressable quantum dot qubit with fault-tolerant control-fidelity. (2014, background): “ized on atoms or defects have been realized in almost spinfree environments, showing coherence times approaching[4] and even exceeding seconds[5].”
• Ultralong Dephasing Times in Solid-State Spin Ensembles via Quantum Control (2018, background): “Solid-state electronic spins, including defects in silicon carbide [1–5], phosphorus spins in silicon [6,7], and silicon-vacancy [3,8,9] and nitrogen-vacancy (NV) centers [10] in diamond, have garnered increasing relevance for quantum science and sensing experiments.”
• Storing quantum information for 30 seconds in a nanoelectronic device. (2014, background): “The n = 2 decay exponent of the Ramsey oscillations corresponds to a Gaussian lineshape in the frequency domain, as expected for a single spin in a dilute spin bath [6].”
• Continuous mode cooling and phonon routers for phononic quantum networks (2012, background): “Qubits encoded in localized spin degrees of freedom, for example in spins associated with Nitrogen vacancy (NV) impurities in diamond [47] or phosphor donors in silicon [48], can be coupled to mechanical motion using magnetized tips [13, 14, 49].”