Large Tunneling Magnetoresistance in GaMnAs / AlAs / GaMnAs Ferromagnetic Semiconductor Tunnel Junctions

By Masaaki Tanaka, Yutaka Higo. 2001

283 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/9e25035ab91694a12a2e9ed1326660cf9264d5f0

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. J. Sinova
2. T. Dietl
3. T. Jungwirth
4. Allan H. MacDonald
5. Hideo Ohno
6. J. Wunderlich
7. J. Masek
8. Jan Kucera

In Materials Chemistry

1. T. Dietl
2. Hideo Ohno
3. J. Sinova
4. T. Jungwirth
5. Allan H. MacDonald
6. J. Masek
7. Jan Kucera
8. J. Wunderlich

Citations in the corpus

• Dilute ferromagnetic semiconductors: Physics and spintronic structures (2013, methodology): “To minimize effects of inter-diffusion, few nm-thick GaAs separators were additionally inserted between AlAs barriers and the p-type electrodes.”
• Theory of ferromagnetic (III, Mn) V semiconductors (2006, background): “…strong spin-orbit coupling which reduces spin coherence in DMSs, functional spintronic trilayer devices can be built, as demonstrated by the measured large MR effects in (Ga,Mn)As based tunneling structures (Chiba et al., 2004a; Mattana et al., 2005; Saito et al., 2005; Tanaka and Higo, 2001).”
• Spin-dependent phenomena and device concepts explored in (Ga,Mn)As (2013, background): “…magnetic tunnel junction devices can be built, as demonstrated by the measured large TMR effects (Brey et al., 2004b; Chiba et al., 2004a,b; Elsen et al., 2007; Mattana et al., 2005; Ohya et al., 2007; Saffarzadeh and Shokri, 2006; Saito et al., 2005; Sankowski et al., 2007; Tanaka and Higo, 2001).”
• Semiconductor spintronics (2002, background): “When a magnetic field is applied along the [100] direction, a tunneling magnetoresistance effect of over 70% is observed, and when a magnetic field is applied along the [110] direction, this effect is approximately 30% [22].”