Ideal strength of diamond, Si, and Ge

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Brittle and ductile fracture of semiconductor nanowires – molecular dynamics simulations (2007, background): “An alternative deflnition of ideal strength also exists in the literature, which is the maximum stress a crystal can sustain when subjected to a uniform tensile or shear strain [ 45 , 46].”
Wear mechanism of diamond tools against single crystal silicon in single point diamond turning process (2013, background): “Also, it is now known that the minimum shear stress required to cause a change in diamond lattice structure to its stable hcp graphite structure is around 80–100 GPa [48,49] which is also much higher than the stress acting on a diamond tool during SPDT of Si.”
Strain-engineered direct-indirect band gap transition and its mechanism in two-dimensional phosphorene (2014, methodology): “7 To estimate the elastic limit of phosphorene, we calculated the surface tension (force per unit length) [44] of phosphorene as a functional of tensile strain, using the method described in the references [45, 46].”
Superior mechanical flexibility of phosphorene and few-layer black phosphorus (2014, methodology): “To calculate the ideal strength of 2D monolayer and few-layer phosphorene systems, we calculated their strain-stress relation using the method described in the references [40, 41].”