High‐Speed and Low‐Energy Nitride Memristors
By Byung Joon Choi, A. Torrezan, John Paul Strachan, P. Kotula, A. Lohn, M. Marinella, Zhiyong Li, R. S. Williams, J. Joshua Yang. 2016
309 citations recorded by the source corpus.
High‐performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (≈85 ps for microdevices with waveguide) and relatively low switching current (≈15 μA for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al‐rich conduction channel through the AlN layer is revealed. The motion of positively charged nitrogen vacancies is likely responsible for the observed switching.
Subfields: Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/9d2ff62221b84bae380eb960d289476aa9373686
How researchers see this paper
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In Electrical and Electronic Engineering
- Daniele Ielmini
- J. Joshua Yang
- H. Philip Wong
- Qiangfei Xia
- John Paul Strachan
- Zhongrui Wang
- R. S. Williams
- Hao Jiang
Citations in the corpus
- Efficient and self-adaptive in-situ learning in multilayer memristor neural networks (2018, background): “Memristors offer excellent size scalability (down to 2 nm) 33 , fast switching (faster than 100 ps) 34 , and low energy per conductance update (lower than 3 fJ) 34 .”
- In-memory computing with resistive switching devices (2018, background): “Here, the individual ferroelectric dipoles change their orientation in response to the voltage applied to the MIM stack (Fig.”
- Hardware implementation of memristor-based artificial neural networks (2024, unknown): “Moreover, the switching time can be as short as 85 ps 42 .”