AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise

By Wu Lu, Jinwei Yang, M. Khan, I. Adesida. 2001

224 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/9cfccaa6fa74d883ce7870910bfe92363c99f921

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1. J. C. Roberts
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Citations in the corpus

• Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs (2008, background): “The subthreshold slope in GaN HEMTs has traditionally been much higher (> 300 mV/dec) than the theoretical limit of 60 mV/dec [ 4 ], [5].”