Unipolar spin diodes and transistors

By M. E. Flatté, Giovanni Vignale. 2000

137 citations recorded by the source corpus.

Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction) transistor. Such devices may be applicable for magnetic sensing, nonvolatile memory, and reprogrammable logic.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/9c9c02fdf357b46532c59768eee1cf02d5a5636b

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

Citations in the corpus

Challenges for semiconductor spintronics (2007, background): “These magnetic transistor devices, such as the unipolar spin transisto”
Half-metallic ferromagnets: From band structure to many-body effects (2007, background): “Keeping in mind that ferromagnetic semiconductors can be considered as a peculiar case of HFM (Irkhin and Katsnelson, 1983), an account of NQP states can be important for proper description of spin diodes and transistors (Flatte and Vignale, 2001; Tkachov et al., 2001).”
Ferromagnetic semiconductors: moving beyond (Ga,Mn)As (2005, background): “Attempts have been made to explore the potential of ferromagnetic semiconductors for new functions such as reconfigurable logic using a unipolar spin transistor in which magnetic domain walls define regions wherein carriers of opposite spin play a role analogous to that of electrons and holes in con”