Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure
By I.-S. Jeong, Jae Hoon Kim, S. Im. 2003
383 citations recorded by the source corpus.
Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/9521782574155b43369ba53db73bf3dbefcf01b7
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In Condensed Matter Physics
In Electronic, Optical and Magnetic Materials
In Materials Chemistry
Citations in the corpus
- Synthesis and microstructural properties of ZnO nanoparticles prepared by precipitation method (2013, background): “A versatile semiconductor material is ZnO which has been attracting attention for its broad range of applications in many areas, including gas sensors [2], biosensors [3], biological labels [4], solar cell [5], electrochemical cells [6], varistors [7], Ultraviolet (UV) photodiodes [8], electrical an”
- Fabrication and characterization of ZnO nanowires based UV photodiodes (2006, background): “E-mail address: leiluo@me.berkeley.edu (L. Luo). operating at high temperature and in harsh environments [5] [6] [7].”
- ZnO-Based Ultraviolet Photodetectors (2010, methodology): “In the past few years, n-ZnO/p-Si photodiodes have been fabricated by different groups [57-68].”