Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters

By W. Yu, Zheng Li, Hailong Zhou, Yu Chen, Yang Wang, Yu Huang, Xiangfeng Duan. Nature Materials, 2012

884 citations recorded by the source corpus.

The layered materials such as graphene have attracted considerable interest for future electronics. Here we report the vertical integration of multi-heterostructures of layered materials to enable high current density vertical field-effect transistors (VFETs). An n-channel VFET is created by sandwiching few-layer molybdenum disulfide (MoS2) as the semiconducting channel between a monolayer graphene and a metal thin film. The VFETs exhibit a room temperature on-off ratio >103, while at same time deliver a high current density up to 5,000 A/cm2, sufficient for high performance logic applications. This study offers a general strategy for the vertical integration of various layered materials to obtain both p- and n-channel transistors for complementary logic functions. A complementary inverter with larger than unit voltage gain is demonstrated by vertically stacking the layered materials of graphene, Bi2Sr2Co2O8 (p-channel), graphene, MoS2 (n-channel), and metal thin film in sequence. The ability to simultaneously achieve high on-off ratio, high current density, and logic integration in the vertically stacked multi-heterostructures can open up a new dimension for future electronics to enable three-dimensional integration.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/948466b57f466cbed4239d6c5734ea0fa892f6b8

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Yu Huang
2. Mark C. Hersam
3. Han Liu
4. Peide D. Ye
5. Xiangfeng Duan
6. Lincoln J. Lauhon
7. Yuan Liu
8. Y. Gong

In Materials Chemistry

1. Mark C. Hersam
2. Yu Huang
3. Xiangfeng Duan
4. Yuan Liu
5. Han Liu
6. Peide D. Ye
7. Lincoln J. Lauhon
8. Vinod K. Sangwan

Citations in the corpus

• Chemical vapor deposition growth of monolayer MoSe2 nanosheets (2014, background): “Combining these nanosheets into heterostructures of TMDs have been explored theoretically [35], and can lead to intriguing structures designed with specifically engineered properties [36, 37].”