A tunable topological insulator in the spin helical Dirac transport regime

By D. Hsieh, Y. Xia, D. Qian, L. Wray, J. Dil, F. Meier, J. Osterwalder, L. Patthey, J. Checkelsky, N. Ong and 7 more. Nature, 2009

1,394 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/927c7779a4b628e76e1e2877fbda13641a3996b9

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. M. Zahid Hasan
2. J. Moore
3. Hsin Lin
4. Arun Bansil
5. Su-Yang Xu
6. Franco Nori
7. Zhi-xun Shen
8. J. Sobota

In Materials Chemistry

1. M. Zahid Hasan
2. J. Moore
3. Hsin Lin
4. Arun Bansil
5. Su-Yang Xu
6. Zhi-xun Shen
7. Claudia Felser
8. R. Cava

Citations in the corpus

• Topological insulators, topological superconductors and Weyl fermion semimetals: discoveries, perspectives and outlooks (2015, methodology): “The Bi2Se3 surface state was observed to be a nearly ideal single Dirac cone near the Dirac node or the Kramers’ point [31, 33].”
• Spatial Fluctuations of Helical Dirac Fermions on the Surface of Topological Insulators (2011, neutral): “Since the recent discovery of topological insulators, modifications of the bulk chemical compositions or deposition of surface adsorbates have been commonly used to tune their chemical potential into the bulk gap and close to the Dirac energ”
• A topological insulator surface under strong Coulomb, magnetic and disorder perturbations (2011, background): “(right) A surface insulator phase can be obtained by adding ∼4 Langmuirs [7] of non-magnetic”
• Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3 (2011, background): “On tuning the carrier density: (1) σ and nH,layer show clear ambipolar conduction with well-defined p- and n-regions, (2) |nH,layer| shows a minimum value (n) for p- and n-conduction, (3) σ shows a roughly linear carrier density dependence for n < n< nbulk, where nbulk ≈ 5× 1012 cm−2 is the carrier ”
• The birth of topological insulators (2010, background): “The surface Fermi level of a topological insulator does not have any particular reason to sit at the Dirac point; however, through a combination of surface and bulk chemical modification, tuning to the Dirac point in Bi 2 Se 3 was recently demonstrate”