Spatial Fluctuations of Helical Dirac Fermions on the Surface of Topological Insulators

By H. Beidenkopf, P. Roushan, Jungpil Seo, Lindsay Gorman, I. Drozdov, Y. Hor, R. Cava, A. Yazdani. 2011

301 citations recorded by the source corpus.

Helical Dirac fermion states in topological insulators could enable dissipation-free spintronics and robust quantum information processors. A study of the influence of disorder on these states shows that although they are resilient against backscattering by magnetic impurities, fluctuations caused by charge impurities could cause problems for such applications.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/29db3b71dd5610536c2f6220d723d4ed7c225443

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. S. Adam
2. Tanmoy Das
3. M. Fuhrer
4. Hsin Lin
5. Arun Bansil
6. E. Hwang
7. E. Rossi
8. N. M. R. Peres

In Condensed Matter Physics

1. Hsin Lin
2. Tanmoy Das
3. Arun Bansil
4. J. Paglione

In Materials Chemistry

1. S. Adam
2. Tanmoy Das
3. M. Fuhrer
4. Hsin Lin
5. Arun Bansil
6. E. Hwang
7. E. Rossi
8. N. M. R. Peres

Citations in the corpus

• Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3 (2011, background): “The rs range corresponds to the existing estimates in the literature of 3 < vf < 7 x 10(5) m/s [3,4], and 30 < κeff < 60 [1,10].”
• Colloquium : Topological band theory (2016, background): “(Chen, Chu, et al. 2010) However, other factors such as spatial fluctuations and surface chemical disorder (Zhang, Chang, et al. 2011; Beidenkopf et al. 2011) could be responsible since a gap-like feature is observed also in doped non-magnetic samples.”