Electrical, thermal, and microstructural characteristics of Ti/Al/Ti/Au multilayer Ohmic contacts to n-type GaN

By A. Motayed, R. Bathe, M. Wood, O. Diouf, R. Vispute, S. Mohammad. 2003

149 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Mechanics of Materials

View Paper: https://www.semanticscholar.org/paper/92528933039215f4b582dd1ca1b17bc842f2dc61

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1. Guangnan Zhou
2. Hongyu Yu
3. Fanming Zeng
4. Wenmao Li
5. Hui Wang
6. T. Duan
7. J. An
8. Lingli Jiang

Citations in the corpus

• A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability (2018, background): “Most Au-based and Au-free metal structures are annealed around 800 ◦C [72,78], while some work reported low temperature (lower than 700 ◦C) annealing to achieve Ohmic contacts [79,80].”