Three-dimensional silicon integration
By J. Knickerbocker, P. Andry, B. Dang, R. Horton, M. Interrante, C. Patel, R. Polastre, K. Sakuma, R. Sirdeshmukh, E. Sprogis and 6 more. IBM Journal of Research and Development, 2008
490 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/91a574ff8a955d19c6d3e7448d557e2f00c071e1
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In Atomic and Molecular Physics, and Optics
Citations in the corpus
- Modeling and Analysis of Through-Silicon Via (TSV) Noise Coupling and Suppression Using a Guard Ring (2011, background): “provides a vertical interconnection between the chips with a much shorter electrical delay and a higher interconnection density compared to those of wire bonds [3], [4].”