A comprehensive explanation of distortion sideband asymmetries

By Nuno Miguel Gonçalves Borges de Carvalho, José Carlos Pedro. 2002

229 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/9077c5ce3626b21c1a5daef4f4abd51dabd30572

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Daniel Rönnow
2. Magnus Isaksson
3. David H. Wisell
4. Heng Zhang
5. Edgar Sanchez-Sinencio
6. José Carlos Pedro

In Condensed Matter Physics

1. Daniel Rönnow
2. Magnus Isaksson
3. David H. Wisell
4. José Carlos Pedro

In Electrical and Electronic Engineering

1. Daniel Rönnow
2. Magnus Isaksson
3. David H. Wisell
4. José Carlos Pedro
5. Heng Zhang
6. Edgar Sanchez-Sinencio
7. Pedro M. Cabral
8. Nuno Miguel Gonçalves Borges de Carvalho

Citations in the corpus

• Practical RF circuit design for modern wireless systems (2003, background): “Design the amplifier for minimum noise and use the balanced configuration [17] that also offers some redundancy if a device fails.”
• A comparative analysis of behavioral models for RF power amplifiers (2006, methodology): “When used for analyzing a PA, physical models can give insight into the cause of the nonlinear properties and memory effects [ 18 ].”
• Nonlinear device model of microwave power GaN HEMTs for high power-amplifier design (2004, background): “mance or even introduce undesired sideband asymmetries (a symptom of long-term PA memory effects) [17].”
• A comparative overview of microwave and wireless power-amplifier behavioral modeling approaches (2005, background): “…the error (in a mean square sense) (31) In a more recent development of their work, Ku and Kenney [29] proposed a behavioral model capable of also accommodating amplitude and frequency-dependent asymmetric distortion responses of PAs excited by two-tone inputs, the so-called IMD asymmetries [39].”
• Linearization Techniques for CMOS Low Noise Amplifiers: A Tutorial (2011, background): “” IM3 asymmetry is attributed to various types of memory effects [37]–[40], but for CMOS LNAs specifically, it is because the reactive part of the circuit impedance (e.”
• Behavioral modeling of nonlinear RF power amplifiers considering memory effects (2003, background): “Carvalho and Pedro [ 2 ] explained the reasons for IMD asymmetry by analyzing nonlinear circuit in small- and large- signal regions.”