High-Performance a-IGZO TFT With $\hbox{ZrO}_{2}$ Gate Dielectric Fabricated at Room Temperature

By Jae Sang Lee, S. Chang, Sang-Mo Koo, Sang Yeol Lee. IEEE Electron Device Letters, 2010

230 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/8f9aaae3aef1a2599161d3c578b9984c21fb4de4

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Jae Kyeong Jeong
2. Y. Mo
3. Jang Yeon Kwon
4. Hideo Hosono
5. T. Kamiya

In Materials Chemistry

1. Jae Kyeong Jeong
2. Y. Mo

Citations in the corpus

• Comparative Study on Light-Induced Bias Stress Instability of IGZO Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics (2010, result): “herein is comparable to the state-of-the-art characteristics for the IGZO TFTs with various novel gate insulators, including Y2O3 [2], Al2O3 [8], and ZrO2 [ 9 ].”