Dispersion of silicon nonlinearities in the near infrared region
By Qiang Lin, Jidong Zhang, G. Piredda, R. W. Boyd, P. Fauchet, Govind P. Agrawal. 2007
247 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/8dcac0ceae2b7fb5ed86c1a791587700ca264ef1
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In Atomic and Molecular Physics, and Optics
In Electrical and Electronic Engineering
- Jürgen Michel
- Lionel C. Kimerling
- Y. Liu
- Anuradha Murthy Agarwal
- Hon Ki Tsang
- Xia Chen
- Lin Zhang
- Michal Lipson
Citations in the corpus
- Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared (2014, background): “For silicon, data from several sources are available [160, 161].”
- Nonlinear optical properties of silicon waveguides (2008, background): “The most recent measurements showed that n2 also has a significant variation with the wavelength [45, 46] but even in these latest measurements, the value of n2 at 1500 nm still vary by a factor of 2, ranging from about 3 × 10−18 m2 W−1 to 6 × 10−18 m2 W−1.”
- Electric field-induced second-order nonlinear optical effects in silicon waveguides (2016, methodology): “The model in [16] and the third order nonlinearities in [14, 16-22] were used”
- Mid-infrared wavelength conversion in silicon waveguides using ultracompact telecom-band-derived pump source (2010, methodology): “More importantly, this measurement, when combined with the reported 2-μm TPA coefficient β TPA in bulk silico”
- Mid-infrared Suspended Membrane Waveguide and Ring Resonator on Silicon-on-Insulator (2012, result): “According to available experimental results of silicon nonlinear RI ðn2Þ [19], [20], a fitting curve was Fig.”