Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

By Lin Zhang, Anuradha Murthy Agarwal, Lionel C. Kimerling, Jürgen Michel. 2014

254 citations recorded by the source corpus.

Abstract Group IV photonics hold great potential for nonlinear applications in the near- and mid-infrared (IR) wavelength ranges, exhibiting strong nonlinearities in bulk materials, high index contrast, CMOS compatibility, and cost-effectiveness. In this paper, we review our recent numerical work on various types of silicon and germanium waveguides for octave-spanning ultrafast nonlinear applications. We discuss the material properties of silicon, silicon nitride, silicon nano-crystals, silica, germanium, and chalcogenide glasses including arsenic sulfide and arsenic selenide to use them for waveguide core, cladding and slot layer. The waveguides are analyzed and improved for four spectrum ranges from visible, near-IR to mid-IR, with material dispersion given by Sellmeier equations and wavelength-dependent nonlinear Kerr index taken into account. Broadband dispersion engineering is emphasized as a critical approach to achieving on-chip octave-spanning nonlinear functions. These include octave-wide supercontinuum generation, ultrashort pulse compression to sub-cycle level, and mode-locked Kerr frequency comb generation based on few-cycle cavity solitons, which are potentially useful for next-generation optical communications, signal processing, imaging and sensing applications.

Subfields: Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/16bf95a532f2ae13235ff92b6050e6d69a088877

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In Atomic and Molecular Physics, and Optics

In Electrical and Electronic Engineering

Citations in the corpus

Mid-infrared octave spanning supercontinuum generation to 8.5 μm in silicon-germanium waveguides (2018, background): “Molecule or bio-agent detection has a large number of applications in medicine, the food industry, environmental monitoring, and security [1,2].”
Mid-infrared integrated photonics on silicon: a perspective (2017, background): “Integrated photonics on Si is uniquely poised for nonlinear frequency generation or conversion in the mid-IR, as (1) the available material systems (including Si, Ge, SiNx, and chalcogenide glasses) exhibit strong Kerr and Raman nonlinearities [84]; (2) in the mid-IR, detrimental nonlinear absorptio”