Broken-Symmetry States and Divergent Resistance in Suspended Bilayer Graphene

By B. Feldman, Jens Martin, A. Yacoby. 2009

241 citations recorded by the source corpus.

D 0 state, the devices show extremely high magnetoresistance that scales as magnetic field divided by temperature. This resistance is predominantly affected by the perpendicular component of the applied field, and the extracted energy gap is significantly larger than expected for Zeeman splitting. These findings indicate that the broken-symmetry states arise from manybody interactions and underscore the important part that Coulomb interactions play in bilayer graphene.

Subfields: Atomic and Molecular Physics, and Optics, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/8cad2c799f6750bef3898e5b914df6afd39a8724

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In Atomic and Molecular Physics, and Optics

In Materials Chemistry

Citations in the corpus

Nobel Lecture: Graphene: Materials in the Flatland (2011, background): “Topological transitions at low electron energies (Feldman et al., 2009), excitonic effects (Min et al., 2008) and topological one-dimensional states (Martin et al., 2008) are among those which can be expected.”
Electronic transport in two-dimensional graphene (2010, background): “Recently suspended graphene bilayers were demonstrated experimentally (Feldman et al., 2009).”
Colloquium: Graphene spectroscopy (2014, background): “, 2009b) to strongly correlated ground states (Bao et al., 2010; Feldman et al., 2009; Mayorov et al., 2011a; Velasco et al., 2012; Weitz et al., 2010).”
Boron nitride substrates for high-quality graphene electronics. (2010, methodology): “The δ n estimated by these two measures is consistent with a similar analysis performed on suspended device”
Electronic properties of graphene-based bilayer systems (2015, methodology): “[26, 27], the mobility was equated with the expression (1/e)dσ/dn, where e is the electron charge, σ is conductivity, and n is electron density.”