Boron nitride substrates for high-quality graphene electronics.

By Cory R. Dean, A. Young, I. Meric, Chul‐Ho Lee, Lei Wang, S. Sorgenfrei, Kenji Watanabe, Takashi Taniguchi, Philip Kim, Kenneth L. Shepard and 1 more. Nature Nanotechnology, 2010

6,533 citations recorded by the source corpus.

Graphene devices on standard SiO(2) substrates are highly disordered, exhibiting characteristics that are far inferior to the expected intrinsic properties of graphene. Although suspending the graphene above the substrate leads to a substantial improvement in device quality, this geometry imposes severe limitations on device architecture and functionality. There is a growing need, therefore, to identify dielectrics that allow a substrate-supported geometry while retaining the quality achieved with a suspended sample. Hexagonal boron nitride (h-BN) is an appealing substrate, because it has an atomically smooth surface that is relatively free of dangling bonds and charge traps. It also has a lattice constant similar to that of graphite, and has large optical phonon modes and a large electrical bandgap. Here we report the fabrication and characterization of high-quality exfoliated mono- and bilayer graphene devices on single-crystal h-BN substrates, by using a mechanical transfer process. Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2). These devices also show reduced roughness, intrinsic doping and chemical reactivity. The ability to assemble crystalline layered materials in a controlled way permits the fabrication of graphene devices on other promising dielectrics and allows for the realization of more complex graphene heterostructures.

Subfields: Biomedical Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/682f75de0b7c2c3df1bdba665884825a1936c2b8

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Citations in the corpus

2D materials and van der Waals heterostructures (2016, background): “hBN substrates leave the band structure of graphenenear theDiracpoint virtually unperturbed (if crystallographic orientations of the two crystals are misaligned) and dramatically improve the mobility of graphene devices (47, 48).”
Spectroscopic investigation of defects in two-dimensional materials (2016, background): “triggered enthusiasm to investigate many other 2D materials, including 2D transition metal dichalcogenides (TMDs), boron nitride, black phosphorus and so on [4-7].”
Sinusoidally Modulated Graphene Leaky-Wave Antenna for Electronic Beamscanning at THz (2013, methodology): “The value of was estimated from the measured impurity-limited DC graphene mobility on boron nitride [29] of cm V s , which leads to”