Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

By F. Pan, Shuang Gao, Chao Chen, C. Song, Fei Zeng. 2014

1,286 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/87a57320abd77dccd0b882eccc47269b6a144c6a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Haibo Zeng
2. Xiaoming Li
3. Razali Ismail
4. Ee Wah Lim

In Materials Chemistry

1. Ye Wu
2. Haibo Zeng
3. Xiaoming Li

Citations in the corpus

• Hardware implementation of memristor-based artificial neural networks (2024, neutral): “A plethora of studies have revised the different switching mechanisms of memristive devices 205 – 212 , therefore we will not further dig into this issue.”
• Capping CsPbBr3 with ZnO to improve performance and stability of perovskite memristors (2017, background): “Resistive random-access memory (RRAM) has been studied intensively over the past two decades and is considered to be a next-generation nonvolatile memory device owing to its advantages, including fast operation, favorable scalability, high density, and low power consumption [2, 3].”
• Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey (2015, background): “However, Flash memories continue to suffer from low endurance, low write speed and high voltage in write process [1,2].”