Single Crystal Nanowire Vertical Surround-Gate Field-Effect Transistor

By H. Ng, Jie Han, Toshishige Yamada, P. Nguyen, Yi P. Chen, M. Meyyappan. 2004

612 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/872f2c47cb8a52fb569aa02172c3c6331040d939

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. Magnus Borgström
2. J. Wallentin
3. Zhiyong Fan
4. Lars-Erik Wernersson
5. Umberto Perinetti
6. Tomas Bryllert
7. Lars Samuelson
8. J. Lu

In Electrical and Electronic Engineering

1. Magnus Borgström
2. Zhiyong Fan
3. J. Wallentin
4. J. Lu
5. Pai-chun Chang
6. Umberto Perinetti
7. Lars-Erik Wernersson
8. Tomas Bryllert

In Materials Chemistry

1. J. Wallentin
2. Zhiyong Fan
3. Magnus Borgström
4. J. Lu
5. Lars Samuelson
6. Umberto Perinetti
7. Pai-chun Chang

Citations in the corpus

• Vertical high-mobility wrap-gated InAs nanowire transistor (2006, background): “This eliminates the need for a complicated etch step to form the channel, as is necessary in many other types of wrap-gate architectures, for example, in Si FinFETs [4], [5].”
• Quasi-one-dimensional metal oxide materials—Synthesis, properties and applications (2006, methodology): “ZnO nanobelt [212], SiO 2 / SiC composite [211], carbon nanotube [216] have been tested for the potential nano-resonator applications.”