Nonvolatile resistive switching memory based on amorphous carbon

By F. Zhuge, W. Dai, Congli He, Aiying Wang, Yiwei Liu, M. Li, Yihong Wu, P. Cui, Run‐Wei Li. 2010

139 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/86bae73bd554cc0ad2d5ec7a89dba475aee7d9b0

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Zhaoping Liu
2. Yihong Wu
3. Xufeng Zhou

In Materials Chemistry

1. Yihong Wu

Citations in the corpus

• Nonvolatile resistive switching in graphene oxide thin films (2009, methodology): “, 2009), and amorphous carbon (a-C) (Sinitskii & Tour, 2009; Zhuge et al., 2010).”
• Mechanism of nonvolatile resistive switching in graphene oxide thin films (2011, methodology): “The metallic conducting behavior in LRS indicates the formation of conducting filaments in GO films [22].”