Transparent Al-Zn-Sn-O Thin Film Transistors Prepared at Low Temperature

By D. Cho, Shinhyuk Yang, C. Byun, Jae‐heon Shin, M. Ryu, S. Park, Chi-Sun Hwang, S. Chung, W. Cheong, Sung‐Min Yoon and 1 more. 2008

141 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/84d88719667eca388e3001973e5cb263e82414a0

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Jang Yeon Kwon
2. John F. Conley
3. Jae Kyeong Jeong

In Materials Chemistry

1. Jang Yeon Kwon
2. John F. Conley
3. Jae Kyeong Jeong

Citations in the corpus

• Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors (2015, background): “Titanium [49, 50], aluminium [51, 52], tantalum [53], strontium [54], barium [54], scandium [55], magnesium [56], lanthanum [57], and gadolinium [58] exhibit similar carrier suppressor behavior in the IZO-based system, as shown in figure 4.”
• Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors (2010, background): “In another work, the spin coat polyimide passivation of AZTO improved S [76].”