Efficiency droop behaviors of InGaN∕GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness

By Yu-Ru Li, Yue-Kai Huang, Y. Lai. 2007

170 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/8465f4358ee7ef380a302a93b0a51a56c9d99f82

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1. J. Ryou
2. Suk Choi
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4. H. Kim
5. Jianping Liu
6. Z. Lochner
7. Hyunsoo Kim
8. A. Laubsch

Citations in the corpus

• Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells (2009, background): “efficiency with increasing drive current, commonly referred to as an “efficiency droop” [62].”
• High-Power and High-Efficiency InGaN-Based Light Emitters (2010, background): “recombination is increased because of the reduced material quality of thick InGaN layers [32].”