Luminescence mechanism of ZnO thin film investigated by XPS measurement

By P. Hsieh, Y. Chen, K. Kao, C. Wang. 2007

559 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/821f9108f548770d6cf3a0f03aab5ef732965255

How researchers see this paper

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1. B. Gao
2. Haowei Zhang
3. Bing Sun
4. Lifeng Liu
5. Jinfeng Kang
6. R. Han
7. Xiaoyan Liu
8. Bin Yu

Citations in the corpus

• Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory (2009, background): “The O2− are mainly accumulated at the interface between the electrode and the resistive layer due to localization effect of the electrode [13], [14].”